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PD- 93840B
SMPS MOSFET
IRF7456
HEXFET(R) Power MOSFET
l
Applications High Frequency DC-DC Converters with Synchronous Rectification
VDSS
20V
RDS(on) max
0.0065
ID
16A
Benefits Ultra-Low RDS(on) at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses l Fully Characterized Avalanche Voltage and Current
l
S S S G
1
8
A A D D D D
2
7
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
20 12 16 13 130 2.5 1.6 0.02 -55 to + 150
Units
V V A W W W/C C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
50
Units
C/W
Typical SMPS Topologies
l
Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes through are on page 8
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1
4/20/00
IRF7456
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 --- --- Static Drain-to-Source On-Resistance --- --- Gate Threshold Voltage 0.6 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. Max. Units Conditions --- --- V VGS = 0V, I D = 250A 0.024 --- V/C Reference to 25C, ID = 1mA 0.00470.0065 VGS = 10V, ID = 16A 0.00570.0075 VGS = 4.5V, I D = 13A 0.011 0.020 VGS = 2.8V, ID = 3.5A --- 2.0 V VDS = VGS, ID = 250A --- 20 VDS = 16V, VGS = 0V A --- 100 VDS = 16V, VGS = 0V, TJ = 125C --- 200 VGS = 12V nA --- -200 VGS = -12V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 44 --- --- --- --- --- --- --- --- --- --- Typ. --- 41 9.7 18 20 25 50 52 3640 1570 330 Max. Units Conditions --- S VDS = 10V, ID = 16A 62 ID = 16A 15 nC VDS = 16V 27 VGS = 5.0V, --- VDD = 10V --- ID = 1.0A ns --- RG = 6.0 --- VGS = 4.5V --- VGS = 0V --- VDS = 15V --- pF = 1.0MHz
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
250 16 0.25
Units
mJ A mJ
Diode Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 48 74 2.5 A 130 1.2 72 110 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.5A, VGS = 0V TJ = 25C, IF = 2.5A di/dt = 100A/s
D
S
2
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IRF7456
1000
VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V TOP
1000
I D , Drain-to-Source Current (A)
100
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V TOP
100
10
1
2.0V
2.0V
0.1 0.1 1
20s PULSE WIDTH TJ = 25 C
10 100
1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.0
2.0
T J = 150C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 16A
ID , Drain-to-Source Current ( )
1.5
10.0
T J = 25C
1.0
1.0
0.5
0.1 2.0 2.2 2.4
VDS = 15V 20s PULSE WIDTH
2.6 2.8 3.0 3.2
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7456
6000
5000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
12
ID = 16A
VDS = 16V
10
C, Capacitance (pF)
4000
Ciss
8
3000
6
2000
Coss
4
1000
2
Crss
0 1 10 100 0 0 20 40
FOR TEST CIRCUIT SEE FIGURE 13
60 80
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
TJ = 150 C
I D , Drain Current (A)
10us
10
100 100us
TJ = 25 C
1
1ms 10 10ms
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8 2.2
1 0.1
TA = 25 C TJ = 150 C Single Pulse
1 10 100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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Fig 6. On-Resistance Vs. Drain Current
IRF7456
20
VDS VGS
RD
I D , Drain Current (A)
15
D.U.T.
+
RG
-VDD
10
10V
Pulse Width 1 s Duty Factor 0.1 %
5
Fig 10a. Switching Time Test Circuit
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 P DM t1 t2
0.01 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF7456
R DS (on) , Drain-to-Source On Resistance ( )
R DS(on) , Drain-to -Source On Resistance ( )
0.0062
0.012
VGS = 4.5V
0.0058
0.010
0.0054
0.008
0.0050
VGS = 10V
0.006
ID = 16A
0.0046 0 20 40 60 80 100 ID , Drain Current (A)
0.004 0 4 8 12 16
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
600
VG
EAS , Single Pulse Avalanche Energy (mJ)
VGS
3mA
TOP
500
Charge
IG ID
BOTTOM
ID 7.2A 10A 16A
Current Sampling Resistors
400
Fig 13a&b. Basic Gate Charge Test Circuit and Waveform
300
200
15 V
V (B R )D S S tp VD S L DRIVE R
100
RG 20V IAS tp
D .U .T IA S 0.01
+ V - DD
0 25 50 75 100 125 150
A
Starting TJ , Junction Temperature ( C)
Fig 14a&b. Unclamped Inductive Test circuit and Waveforms
Fig 14c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF7456
SO-8 Package Details
D -B-
D IM
5
IN C H E S M IN .05 32 .00 40 .01 4 .00 75 .18 9 .15 0 M AX .06 88 .00 98 .01 8 .009 8 .196 .15 7
M ILLIM E T E R S M IN 1.3 5 0.1 0 0.3 6 0.19 4.80 3.8 1 M AX 1.75 0.25 0.46 0.25 4.98 3.99
A
6 5 H 0 .2 5 (.0 1 0 ) M AM
5
8 E -A-
7
A1 B C D E e e1 H K
0 .1 0 (.0 0 4 ) L 8X 6 C 8X
1
2
3
4
e 6X
e1 A
K x 4 5
.05 0 B A S IC .02 5 B A S IC .22 84 .01 1 0.16 0 .244 0 .01 9 .05 0 8
1.27 B A S IC 0 .635 B A S IC 5.8 0 0.2 8 0.4 1 0 6.20 0.48 1.27 8
-C B 8X 0 .2 5 (.0 1 0 ) A1 M CASBS
L
R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X
NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E ..
6 .4 6 ( .2 5 5 )
1 .7 8 (.0 7 0 ) 8X
1 .2 7 ( .0 5 0 ) 3X
SO-8 Part Marking
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IRF7456
SO-8 Tape and Reel
TER M IN AL N UM B ER 1
1 2.3 ( .484 ) 1 1.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
F EE D D IRE C TIO N
N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ). 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 .
33 0.00 (12.992) M AX .
14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec
Starting TJ = 25C, L = 2.0mH
RG = 25, IAS = 16A.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00
8
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